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| CYStech Electronics Corp. 3A NPN Epitaxial Planar Power Transistor www..com Issued Date : 2003.09.04 Revised Date : Page No. : 1/4 Spec. No. : C609E3 TIP31CE3 Description TIP31CE3 is designed for use in general purpose amplifier and switching applications. * Low collector-emitter saturation voltage, VCE(sat) = 1.2V(max) @ IC = 3A * High collector-emitter sustaining voltage, BVCEO(SUS) = 100V(min) * High current gain-bandwidth product , fT = 3MHz(min) @ IC = 500mA Features Symbol TIP31CE3 Outline TO-220AB BBase CCollector EEmitter BCE Absolute Maximum Ratings (Ta=25C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Power Dissipation @ TA=25 Power Dissipation @ TC=25 Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature Note : 1. Single Pulse , Pw380s, Duty2%. Symbol VCBO VCEO VEBO IC ICP IB PD PD RJA RJC Tj Tstg Limits 100 100 5 3 5 (Note 1) 1 2 40 62.5 3.125 150 -55~+150 Unit V V V A A W C/W C/W C C TIP31CE3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25C) Symbol *BVCEO(SUS) ICEO ICES IEBO *VCE(sat) *VBE(on) *hFE *hFE fT Min. 100 25 10 3 Typ. Max. 300 200 1 1.2 1.8 50 Unit V A A mA V V MHz www..com Issued Date : 2003.09.04 Revised Date : Page No. : 2/4 Spec. No. : C609E3 Test Conditions IC=30mA, IB=0 VCE=60V, IB=0 VCE=100V, VBE=0 VEB=5V, IC=0 IC=3A, IB=375mA VCE=4V, IC=3A VCE=4V, IC=1A VCE=4V, IC=3A VCE=10V, IC=500mA, f=1MHz *Pulse Test : Pulse Width 380s, Duty Cycle2% TIP31CE3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current 100 Saturation Voltage---(mV) VCE=4V www..com Issued Date : 2003.09.04 Revised Date : Page No. : 3/4 Spec. No. : C609E3 Saturation Voltage vs Collector Current 10000 Current Gain---H FE 1000 VBE(SAT)@IC=10IB VCE=2V 100 VCE(SAT)@IC=10IB 10 1 10 100 1000 10000 10 1 10 100 1000 10000 Collector Current---IC(mA) Collector Current---IC(mA) ON Voltage vs Collector Current 10000 On Voltage---VBE(ON)(mV) Power Dissipation---PD(W) VCE=2V Power Derating Curve 45 40 35 30 25 20 15 10 5 0 1000 100 1 10 100 1000 10000 Collector Current---IC(mA) 0 50 100 150 Case Temperature---Tc() 200 Power Derating Curve 2.5 Power Dissipation---PD(W) 2 1.5 1 0.5 0 0 50 100 150 Ambient Temperature---TA() 200 TIP31CE3 CYStek Product Specification CYStech Electronics Corp. TO-220AB Dimension www..com Issued Date : 2003.09.04 Revised Date : Page No. : 4/4 Spec. No. : C609E3 A D B E C Marking: TIP31C H I G 4 P M 3 2 1 N Style: Pin 1.Base 2.Collector 3.Emitter 4.Collector K O 3-Lead TO-220AB Plastic Package CYStek Package Code: E3 *: Typical DIM A B C D E G H Inches Min. Max. 0.2197 0.2949 0.3299 0.3504 0.1732 0.185 0.0453 0.0547 0.0138 0.0236 0.3803 0.4047 *0.6398 Millimeters Min. Max. 5.58 7.49 8.38 8.90 4.40 4.70 1.15 1.39 0.35 0.60 9.66 10.28 *16.25 DIM I K M N O P Inches Min. Max. *0.1508 0.0295 0.0374 0.0449 0.0551 *0.1000 0.5000 0.5618 0.5701 0.6248 Millimeters Min. Max. *3.83 0.75 0.95 1.14 1.40 *2.54 12.70 14.27 14.48 15.87 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: * Lead: 42 Alloy ; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. TIP31CE3 CYStek Product Specification |
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